SSG9410 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SSG9410
18A, 30V,RDS(ON) 6m
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25^oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
BVDS/ Tj
VGS(th)
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current (Tj=25^oC)
IDSS
Drain-Source Leakage Current (Tj=70^oC)
Static Drain-Source On-Resistance²
RDS(ON)
Total Gate Charge ²
Gate-Source Charge
Gate-Drain ("Miller") Charge
2
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
30
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
0.01
_
_
_
_
_
_
_
59
10
23
16
12
96
30
5080
660
400
47
Max.
_
_
1.2
±100
1
25
5
6
8
95
_
_
_
_
_
_
8100
_
_
_
Unit Test Condition
V
V/ ^oC
VGS=0V, ID=250uA
Reference to 25^oC,ID=1mA
V
VDS=VGS, ID=250uA
nA
VGS=±12V
uA
VDS=30V,VGS=0
uA
VDS=24V,VGS=0
VGS=10V, ID=18A
m
VGS=4.5V, ID=12A
VGS=2.5V, ID=6A
ID=18A
nC
VDS=24V
VGS=4.5V
VDS=15V
ID=1A
nS
VGS=10V
RG=3.3
RD=15
VGS=0V
pF
VDS=25V
f=1.0MHz
S
VDS=10V, ID=12A
Source-Drain Diode
Parameter
Forward On Voltage ²
Reverse Recovery Time ²
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
_
_
_
Typ.
_
43
39
Max.
-1.2
_
_
Unit
V
nS
nC
Test Condition
IS=18A, VGS=0V.
Is=18A, VGS=0
dl/dt=100A/uS
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch² copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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