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| SSG4990N Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – Dual-N Channel Mode Power MOSFET | |||
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Elektronische Bauelemente
SSG4990N
10 A, 100 V, RDS(ON) 81 mïï
Dual-N Channel Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(ON)
gfs
VSD
100
-
1
-
-
-
-
-
-
-
20
-
-
-
-
-
-
40
-
0.7
Dynamic 2
-
-
±100
1
25
-
81
92
-
-
V VGS= 0V, ID= 250μA
V VDS= VGS, ID= 250μA
nA VDS= 0V, VGS= 20V
μA VDS= 80V, VGS= 0V
μA VDS= 80V, VGS= 0V, TJ= 55°C
A VDS= 5V, VGS= 10V
VGS= 10V, ID= 4.2A
mâ¦
VGS= 4.5V, ID= 4A
S VDS= 15V, ID= 4.2A
V IS= 2.3A, VGS= 0V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
20
-
ID= 4.2A
Qgs
-
7.0
-
nC VDS= 15V
VGS= 5V
Qgd
-
7.0
-
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Td(on)
-
20
-
Tr
-
Td(off)
-
9
70
-
-
VDD= 25V
nS
ID= 1A
VGEN= 10V
RL= 25â¦
Tf
-
20
-
Notes:
1. Pulse testï¼PW ⦠300μs duty cycle ⦠2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
14-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2
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