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| SSG4953P Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – Dual P-Ch Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SSG4953P
-5.2 A, -30 V, RDS(ON) 52 mï
Dual P-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
VGS(th)
IGSS
IDSS
ID(on)
RDS(ON)
gfs
VSD
-1
-
-
-
-
-
-
-
-30
-
-
-
-
-
-
19
-
-0.7
Dynamic 2
-
±100
-1
-5
-
52
89
-
-
V VDS= VGS, ID= -250μA
nA VDS= 0V, VGS= ±25V
μA VDS= -24V, VGS= 0V
μA VDS= -24V, VGS= 0V, TJ=55°C
A VDS= -5V, VGS= -10V
VGS= -10V, ID= -5.2A
mâ¦
VGS= -4.5V, ID= -4.0A
S VDS= -15V, ID= -5.2A
V IS= -2.1A, VGS= 0V
Total Gate Charge
Qg
-
15
-
Gate-Source Charge
Qgs
-
2.2
-
Gate-Drain Charge
Qgd
-
1.7
-
Turn-On Delay Time
Td(on)
-
10
-
Rise Time
Tr
-
2.8
-
Turn-Off Delay Time
Td(off)
-
53.6
-
Fall Time
Tf
-
46
-
Notes:
1. Pulse testï¼PW ⦠300μs duty cycle ⦠2%.
2. Guaranteed by design, not subject to production testing.
ID= -5.2A
nC VDS= -15V
VGS= -10V
VDD= -15V
nS
ID= -1A
VGEN= -10V
RL= 15â¦, RG= 6â¦
http://www.SeCoSGmbH.com/
15-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
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