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| SSG4890N_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – Dual-N Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SSG4890N
1.4 A, 150 V, RDS(ON) 700 mï
Dual-N Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS(th)
IGSS
Static
1
-
-
-
-
V
±100
nA
-
IDSS
-
-
1
μA
-
10
ID(on)
0.5
-
-
A
-
RDS(ON)
-
-
0.7
â¦
-
1.2
gfs
-
11
-
S
VSD
-
0.8
-
V
Dynamic 2
Input Capacitance
Ciss
-
347
-
Output Capacitance
Coss
-
37
-
pF
Reverse Transfer Capacitance
Crss
-
20
-
Total Gate Charge
Qg
-
3.7
-
Gate-Source Charge
Qgs
-
1.3
-
nC
Gate-Drain Charge
Qgd
-
1.8
-
Turn-On Delay Time
Td(on)
-
5
-
Rise Time
Turn-Off Delay Time
Tr
-
10
-
nS
Td(off)
-
16
-
Fall Time
Tf
-
8
-
Notes
1 Pulse testï¼PW ⦠300μs duty cycle ⦠2%.
2 Guaranteed by design, not subject to production testing.
Test conditions
VDS=VGS, ID=250μA
VDS=0, VGS=20V
VDS=120V, VGS=0
VDS=120V, VGS=0, TJ=55°C
VDS=5V, VGS=10V
VGS=10V, ID=1.2A
VGS=4.5V, ID=1.1A
VDS=15V, ID=1.2A
IS=1.3A, VGS=0
VDS=15V,
VGS=0,
f=1MHz
ID= 1.2A
VDS= 75V
VGS= 4.5V
VDD=75V
ID=1.2A
VGEN=10V
RL=62.5â¦
RGEN=6â¦
http://www.SeCoSGmbH.com/
24-Aug-2012 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
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