SSG4530C Datasheet, PDF (2/6 Pages) SeCoS Halbleitertechnologie GmbH – N & P-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4530C
N-Ch: 5.3A, 30V, R_DS(ON) 82 mΩ
P-Ch: -5.2A, -30V, R_DS(ON) 80 mΩ
N & P-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol ^Ch Min. Typ. Max. Unit
Teat Conditions
Static
Gate Threshold Voltage
N
VGS(th)
P
Gate-Body Leakage
N
IGSS
P
N
Zero Gate Voltage Drain Current
IDSS
P
On-State Drain Current ¹
N
ID(on)
P
Drain-Source On-Resistance ¹
N
RDS(ON)
P
Diode Forward Voltage
N
VSD
P
1.2
1.7
-1.2
-1.8
-
±80
-
±80
-
0.8
-
-0.8
20
24
-20
-24
-
43
-
70
-
45
-
72
-
0.75
-
-0.88
Dynamic ²
2.5
-2.5
±100
±100
1
-1
-
-
50
82
52
80
-
-
VDS=VGS, ID=250µA
V
VDS=VGS, ID= -250µA
VDS=0, VGS=20V
nA
VDS=0, VGS= -20V
VDS=24V, VGS=0
µA
VDS= -24V, VGS=0
VDS=5V, VGS=10V
A
VDS= -5V, VGS= -10V
VGS=10V, ID=5.3A
VGS=4.5V, ID=4.2A
mΩ
VGS= -10V, ID= -5.2A
VGS= -4.5V, ID= -4.2A
VGS=0, IS=1.3A
V
VGS=0, IS= -1.3A
Total Gate Charge
N
-
2.2
-
Qg
P
-
10
-
Gate-Source Charge
N
-
0.5
-
Qgs
P
-
2.2
-
Gate-Drain Charge
N
-
0.8
-
Qgd
P
-
1.7
-
Turn-On Delay Time
N
-
8
-
Td(on)
P
-
10
-
Rise Time
N
-
5
-
Tr
P
-
2.8
-
Turn-Off Delay Time
N
-
23
-
Td(off)
P
-
53.6
-
Fall Time
N
-
3
-
Tf
P
-
46
-
Notes:
1. Pulse test：PW≦300µs duty cycle≦2%.
2. Guaranteed by design, not subject to production testing.
N-Channel
ID=5.3A, VDS=15V, VGS=10V
nC
P-Channel
ID= -5.2A, VDS= -10V, VGS= -15V
N-Channel
VDD=15V, VGEN=10V
ID=1A, RGEN=6Ω
nS _P-Channel
VDD= -15V, VGEN= -10V
ID= -1A, RGEN=6Ω
http://www.SeCoSGmbH.com/
30-Jul-2012 Rev. A
Any changes of specification will not be informed individually.
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