 English |
|
|
|
|
|
|
|
| SSG4499P Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – P-Ch Enhancement Mode Power MOSFET | |||
| |||
| ◁ |
Elektronische Bauelemente
SSG4499P
-6.8 A, -60 V, RDS(ON) 45 mïï
P-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
VGS(th)
IGSS
IDSS
ID(on)
RDS(ON)
gfs
VSD
-1
-
-
-
-
-
-
-
-20
-
-
-
-
-
-
8
-
-
Dynamic 2
-
±100
-1
-10
-
45
60
-
-1.2
V VDS= VGS, ID= -250μA
nA VDS=0, VGS= ±20V
VDS= -48V, VGS=0
μA
VDS= -48V, VGS=0, TJ=55°C
A VDS= -5V, VGS= -10V
VGS= -10V, ID= -6.8A
mâ¦
VGS= -4.5V, ID= -5.9A
S VDS= -15V, ID= -6.8A
V IS= -2.5A, VGS=0
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
18
-
ID= -6.8A
Qgs
-
5
-
nC VDS= -30V
Qgd
-
2
-
VGS= -4.5V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
-
8
-
VDD= -30V
-
10
-
ID= -1A
nS VGEN= -10V
-
35
-
RL=30â¦
-
12
-
RG=6â¦
Notes:
1. Pulse testï¼PW ⦠300μs duty cycle ⦠2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
07-Apr-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese