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| SSG4492N Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SSG4492N
9A, 100V, RDS(ON) 26mï
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
VGS(th)
IGSS
IDSS
ID(on)
RDS(ON)
gfs
VSD
Static
1
-
-
V
-
-
±100
nA
-
-
1
μA
-
-
25
20
-
-
A
-
-
26
mâ¦
-
-
36
-
40
-
S
-
0.7
-
V
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
12.5
-
Qgs
-
2.6
-
nC
Qgd
-
4.6
-
Switching
Turn-On Delay Time
Td(on)
-
20
-
Rise Time
Turn-Off Delay Time
Tr
-
9
-
nS
Td(off)
-
70
-
Fall Time
Tf
-
20
-
Notes:
1 Pulse testï¼PW ⦠300μs duty cycle ⦠2%.
2 Guaranteed by design, not subject to production testing.
Test conditions
VDS=VGS, ID=250μA
VDS=0, VGS=20V
VDS=80V, VGS=0
VDS=80V, VGS=0, TJ= 55°C
VDS=5V, VGS=10V
VGS=10V, ID=2A
VGS=4.5V, ID=2A
VDS=15V, ID=2A
IS=2A, VGS=0
ID=2A
VDS=15V
VGS=4.5V
VDD=25
ID=1A
VGEN=10V
RL=25â¦
http://www.SeCoSGmbH.com/
16-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2
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