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| SSG4410N_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SSG4410N
13 A, 30 V, RDS(ON) 13.5 mï
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Static
Gate-Threshold Voltage
VGS(th)
1
-
-
V
Gate-Body Leakage
IGSS
-
-
±100
nA
Zero Gate Voltage Drain Current
IDSS
-
-
-
1
μA
-
25
μA
On-State Drain Current 1
ID(on)
20
-
-
A
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
RDS(ON)
gfs
VSD
-
-
-
-
13.5
20
mâ¦
-
40
-
S
-
0.7
-
V
Dynamic 2
Total Gate Charge
Gate-Source Charge
Qg
-
12.5
-
Qgs
-
2.6
-
nC
Gate-Drain Charge
Qgd
-
4.6
-
Input Capacitance
Output Capacitance
CISS
1191
COSS
412
pF
Reverse Transfer Capacitance
CRSS
160
Turn-On Delay Time
Td(on)
-
20
-
Rise Time
Turn-Off Delay Time
Fall Time
Tr
-
9
-
nS
Td(off)
-
70
-
Tf
-
20
-
Notes
1 Pulse testï¼PW ⦠300μs duty cycle ⦠2%.
2 Guaranteed by design, not subject to production testing.
Teat Conditions
VDS= VGS, ID= 250μA
VDS= 0V, VGS= 20V
VDS= 24V, VGS= 0V
VDS= 24V, VGS= 0V, TJ= 55°C
VDS= 5V, VGS= 10V
VGS= 10V, ID= 10A
VGS= 4.5V, ID= 8A
VDS= 15V, ID= 10A
IS= 2.3A, VGS= 0V
ID= 10A
VDS= 15V
VGS= 4.5V
f = 1 MHz
VDS= 15V
VGS= 0V
VDD= 25V
ID= 1A
VGEN= 10V
RL= 25â¦
http://www.SeCoSGmbH.com/
10-Dec-2010 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
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