SSG4394N Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente
SSG4394N
6.5A 150V, R_DS(ON) 50mΩ
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
1
IGSS
-
-
-
V
-
±100
nA
-
Zero Gate Voltage Drain Current
IDSS
-
-
1
µA
-
25
On-State Drain Current ¹
ID(on)
13
-
-
A
Drain-Source On-Resistance ¹
Forward Transconductance ¹
-
RDS(ON)
-
gfs
-
-
50
mΩ
-
60
20
-
S
Diode Forward Voltage
VSD
-
0.72
-
V
Dynamic ²
Input Capacitance
Output Capacitance
Ciss
-
4388
-
Coss
-
260
-
pF
Reverse Transfer Capacitance
Crss
-
239
-
Total Gate Charge
Qg
-
58
-
Gate-Source Charge
Qgs
-
16
-
nC
Gate-Drain Charge
Qgd
-
34
-
Turn-On Delay Time
Td(on)
-
20
-
Rise Time
Turn-Off Delay Time
Tr
-
27
-
ns
Td(off)
-
129
-
Fall Time
Tf
-
37
-
Notes:
1 Pulse test：PW ≦ 300µs duty cycle ≦ 2%.
2 Guaranteed by design, not subject to production testing.
Test conditions
VDS=VGS, ID=250µA
VDS=0, VGS= ±20V
VDS=120V, VGS=0
VDS=120V, VGS=0, TJ= 55°C
VDS=5V, VGS=10V
VGS=10V, ID=5.2A
VGS=5.5V, ID=4.8A
VDS=15V, ID=5.2A
IS=2.3A, VGS=0
VDS=15V
VGS=0
f=1MHz
ID=5.2A
VDS=75V
VGS=5.5V
VDS=75V
ID=5.2A
VGEN=10V
RL=14.5Ω
RGEN=6Ω
http://www.SeCoSGmbH.com/
31-Jul-2012Rev. A
Any changes of specification will not be informed individually.
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