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| SSG4390N Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Ch Enhancement Mode Power MOSFET | |||
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Elektronische Bauelemente
SSG4390N
1.9A, 150V, RDS(ON) 625mï
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
VGS(th)
IGSS
IDSS
ID(on)
RDS(ON)
gfs
VSD
Static
1
-
-
V
-
-
±100
nA
-
-
1
μA
-
-
10
5
-
-
A
-
-
625
mâ¦
-
-
900
-
5
-
S
-
0.8
-
V
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
-
3.5
-
Qgs
-
1.3
-
nC
Qgd
-
1.5
-
Td(on)
-
4.7
-
Tr
-
5
-
nS
Td(off)
-
16
-
Tf
-
5
-
Input Capacitance
Ciss
356
Output Capacitance
Coss
38
pF
Reverse Transfer Capacitance
Crss
17
Notes:
1 Pulse testï¼PW ⦠300μs duty cycle ⦠2%.
2 Guaranteed by design, not subject to production testing.
Test conditions
VDS=VGS, ID=250μA
VDS=0, VGS=±20V
VDS=120V, VGS=0
VDS=120V, VGS=0, TJ= 55°C
VDS=5V, VGS=10V
VGS=10V, ID=1.9A
VGS=4.5V, ID=1.6A
VDS=15V, ID=1.9A
IS=1.8A, VGS=0
ID=1.9A
VDS=75V
VGS=4.5V
VDD=75V
ID=1.9A
VGEN=10V
RL= 50â¦
RGEN=6â¦
VDS=15V
VGS=0V
f=1MHz
http://www.SeCoSGmbH.com/
09-Mar-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
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