SSF1320N Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SSF1320N
2A , 20V , R_DS(ON) 58 mΩ
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
0.7
IGSS
-
-
-
V VDS=VGS, ID=250uA
-
±100
nA VDS=0, VGS= ±8V
-
-
1
VDS=16V, VGS=0
Zero Gate Voltage Drain Current
IDSS
uA
-
-
10
VDS=16V, VGS=0, TJ=55°C
On-State Drain Current ¹
ID(on)
10
-
-
A VDS =5V, VGS=4.5V
Drain-Source On-Resistance ¹
Forward Transconductance ¹
-
RDS(ON)
-
-
58
VGS=4.5V, ID=2A
mΩ
-
82
VGS=2.5V, ID=1.7A
gfs
-
11.3
-
S VDS=10V, ID=2A
Diode Forward Voltage
VSD
-
0.75
-
V IS=1.6A, VGS=0
Dynamic ²
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
720
-
VDS=15V,
Coss
-
165
-
pF VGS=0,
Crss
-
60
-
f=1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
7.5
-
VDS=10V,
Qgs
-
0.6
-
nC VGS=4.5V,
Qgd
-
1
-
ID=2A
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
8
-
VDD=10V,
Tr
-
24
-
nS ^VGEN=4.5V,
Td(off)
-
35
-
RL=15Ω,
Tf
-
10
-
ID=1A
Notes:
1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
28-Aug-2012 Rev. A
Any changes of specification will not be informed individually.
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