SPR80N03 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SPR80N03
80A , 30V , R_DS(ON) 5.5 mΩ
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. _Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V VGS=0, ID= 250µA
Gate-Threshold Voltage
VGS(th)
1
-
2.5
V VDS=VGS, ID=250µA
Forward Tranconductance
gfs
-
43
-
S VDS=5V, ID=30A
Gate-Source Leakage Current
IGSS
-
-
±100 nA VGS= ±20V
Drain-Source Leakage Current
-
-
1
VDS=24V, VGS=0, TJ=25°C
IDSS
µA
-
-
5
VDS=24V, VGS=0, TJ=55°C
Static Drain-Source On-Resistance ²
-
-
5.5
VGS=10V, ID=30A
RDS(ON)
mΩ
-
-
8
VGS=4.5V, ID=15A
Gate Resistance
Rg
-
1.7
2.9
Ω f =1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time ²
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
20
-
-
7.6
-
-
7.2
-
-
7.8
-
-
15
-
-
37.3
-
-
10.6
-
ID=15A
nC VDS=15V
VGS=4.5V
VDD=15V
nS
ID=15A
VGS=10V
RG=3.3Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
2295
-
VGS =0
Coss
-
267
-
pF VDS=15V
Crss
-
210
-
f =1.0MHz
Guaranteed Avalanche Characteristics
Single Pulse Avalanche Energy ⁵
EAS
63
-
-
mJ VDD=25V, L=0.1mH, IAS=24A
Diode Forward Voltage ²
Continuous Source Current ^1,6
Pulsed Source Current ^2,6
Source-Drain Diode
VSD
-
-
1
V IS=1A, VGS=0V
IS
-
-
80
A
VG=VD=0, Force Current
ISM
-
-
160
A
Reverse Recovery Time
Reverse Recovery Charge
Trr
-
14
-
nS _{IF=30A, dl/dt=100A/µS,}
Qrr
-
5
-
nC ^TJ=25°C
Note:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , ≦10sec , 125℃/W at steady state
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=48A
4. The power dissipation is limited by 150°C juncti on temperature
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
16-May-2014 Rev.A
Any changes of specification will not be informed individually.
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