SPR45P03_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SPR45P03
-45A , -30V , R_DS(ON) 15 mΩ
P-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. _Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V VGS=0, ID= -250uA
Gate-Threshold Voltage
VGS(th)
-1
-
-2.5
V VDS=VGS, ID= -250uA
Forward Tranconductance
gfs
-
30
-
S VDS= -5V, ID= -30A
Gate-Source Leakage Current
IGSS
-
-
±100 nA VGS= ±20V
Drain-Source Leakage Current
-
-
-1
VDS= -24V, VGS=0, TJ=25°C
IDSS
uA
-
-
-5
VDS= -24V, VGS=0, TJ=55°C
Static Drain-Source On-Resistance ²
-
-
15
VGS= -10V, ID= -30A
RDS(ON)
mΩ
-
-
25
VGS= -4.5V, ID= -15A
Gate Resistance
Rg
-
9
18
Ω f =1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time ²
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
22
-
-
8.7
-
-
7.2
-
-
8
-
-
73.7
-
-
61.8
-
-
24.4
-
ID= -15A
nC VDS= -15V
VGS= -4.5V
VDD= -15V
nS
ID= -15A
VGS= -10V
RG=3.3Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
2215
-
VGS =0
Coss
-
310
-
pF VDS= -15V
Crss
-
237
-
f =1.0MHz
Guaranteed Avalanche Characteristics
Single Pulse Avalanche Energy ⁵
EAS
66
-
-
mJ VDD= -25V, L=0.1mH, IAS= -21A
Diode Forward Voltage ²
Continuous Source Current ^1,6
Pulsed Source Current ^2,6
Source-Drain Diode
VSD
-
-
IS
-
-
ISM
-
-
-1
-45
-150
V IS= -1A, VGS=0V
A
VG=VD=0, Force Current
A
Reverse Recovery Time
Reverse Recovery Charge
trr
-
19
-
nS _{IF= -15A, dl/dt=100A/µs,}
Qrr
-
9
-
nC ^TJ=25°C
Note:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , ≦10sec , 125℃/W at steady state
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The EAS data shows Max. rating . The test condition is VDD= -25V,VGS= -10V,L=0.1mH,IAS= -50A
4. The power dissipation is limited by 150°C juncti on temperature
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
19-May-2014 Rev.A
Any changes of specification will not be informed individually.
Page 2 of 4