SMG5409_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SMG5409
-2.6A , -30V , R_DS(ON) 120 mΩ
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Static
Teat Conditions
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage Current
Drain-Source Leakage Current
Drain-Source On-Resistance ¹
Forward Transconductance
Total Gate Charge ¹
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time ¹
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Forward Voltage ¹
Reverse Recovery Time ¹
Reverse Recovery Charge
Notes:
1. Pulse width≦300us, duty cycle≦2%.
BVDSS
VGS(th)
IGSS
IDSS
-30
-1.0
-
-
-
-
-
-
-3.0
-
±100
-
-1
-
-5
-
RDS(ON)
-
-
120
-
170
gfs
-
4
-
Dynamic
Qg
-
5
8
Qgs
-
1
-
Qgd
-
3
-
Td(on)
-
8
-
Tr
-
5
-
Td(off)
-
20
-
Tf
-
7
-
Ciss
-
412 660
Coss
-
91
-
Crss
-
62
-
Source-Drain Diode
VSD
-
-
-1
TRR
-
16.8
-
QRR
-
10
-
V VGS=0, ID= -250uA
V VDS=VGS, ID= -250uA
nA VGS=±20V
VDS= -30V, VGS=0
µA
VDS= -24V, VGS=0
VGS= -10V, ID= -2.6A
mΩ
VGS= -4.5V, ID= -2.0A
S VDS= -5V, ID= -2.5A
VDS= -24V,
nC VGS= -4.5V,
ID= -2.6A
VDS= -15V,
VGS= -10V,
nS RG=3.3Ω,
RD=15Ω,
ID= -1A
VGS=0,
pF VDS= -25V,
f=1.0MHz
V IS= -1A, VGS=0
ns _{IS= -2.6A, VGS=0}
nC ^{dI/dt=100A/µs}
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
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