SMG5402 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SMG5402
4A , 30V , R_DS(ON) 55 mΩ
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage Current
BVDSS
30
VGS(th)
0.5
IGSS
-
-
-
V VGS=0, ID=250µA
-
1.5
V VDS=VGS, ID=250µA
-
±100
nA VGS=±12V
Drain-Source Leakage
TJ=25°C
-
-
1
VDS=30V, VGS=0
Current
TJ=70°C
IDSS
-
µA
-
25
V DS=24V, VGS=0
Drain-Source On-Resistance
-
RDS(ON)
-
-
55
VGS=10V, ID=4A
-
70
mΩ VGS=4.5V, ID=3A
-
-
110
VGS=2.5V, ID=2A
Forward Transconductance
Total Gate Charge²
Gate-Source Charge
Gate-Drain (‘‘Miller’’) Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time²
Fall Time
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
3
-
Dynamic
-
6
-
-
1
-
-
2.8
-
-
5.8
-
-
9.6
-
-
14.4
-
-
3.9
-
S VDS=10V, ID=3A
VDS=15V,
nC VGS=4.5V,
ID=3A
VDS=15V,
VGS=5V,
nS RG=3.3Ω,
RD=15Ω,
ID=1A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
335
-
Coss
-
50
-
Crss
-
45
-
Source-Drain Diode
VGS=0,
pF VDS=25V,
f=1.0MHz
Diode Forward Voltage²
VSD
-
-
1.2
V IS=1.2A, VGS=0
Reverse Recovery Time²
Reverse Recovery Charge
TRR
-
15
-
ns _{IS=3A, VGS=0}
QRR
-
8
-
nC ^{dI/dt=100A/µs}
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300us, duty cycle≦2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270°C /W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
26-Oct-2012 Rev. A
Any changes of specification will not be informed individually.
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