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| SMG3407_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode MOSFET | |||
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Elektronische Bauelemente
SMG3407
-4.1A , -30V , RDS(ON) 52 mïï
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Forward Transconductance
Gate-Body Leakage Current
Drain-Source Leakage Current
Drain-Source On-Resistance 2
Total Gate Charge2
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
BVDSS
VGS(th)
gfs
IGSS
IDSS
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Rg
Static
-30
-
-1.0
-
-
8.2
-
-
-
-
-
-
-
-
-
-
-
7
-
3.1
-
3
-
8.6
-
5
-
28.2
-
13.5
-
700
-
120
-
75
-
10
-
-3
-
±100
-1
-5
52
87
-
-
-
-
-
-
-
-
-
-
-
V VGS=0, ID= -250uA
V VDS=VGS, ID= -250uA
S VDS= -5V, ID= -4A
nA VGS=±20V
μA VDS= -30V, VGS=0
VDS= -24V, VGS=0
m⦠VGS= -10V, ID= -4.1A, TJ=25°C
VGS= -4.5V, ID= -3.0A , TJ=55°C
VDS= -4.5V,
nC VGS= -15V,
ID= -4A
VDS= -15V,
nS
VGS= -10V,
RG=3â¦,
RL=3.6â¦,
pF VGS=0,VDS= -15V,f=1.0MHz
⦠f=1.0MHz
Source-Drain Diode
Diode Forward Voltage1
Reverse Recovery Time1
Reverse Recovery Charge
VSD
-
-
-1
V IS= -1A, VGS=0
TRR
-
27
-
ns IS= -4A, VGS=0
QRR
-
15
-
nC dI/dt=100A/μs
Continuous Source Current (Body Diode)
IS
-
-
-2.2
A VD= VG=0, VS= -1V
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse widthâ¦300μs, duty cycleâ¦2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270°C / W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
11-Dec-2014 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
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