SMG3403_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SMG3403
-3.7A, -30V,RDS(ON) 75m
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25^oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
BVDS/ Tj
VGS(th)
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current (Tj=25^oC)
IDSS
Drain-Source Leakage Current (Tj=55 ^oC)
Static Drain-Source On-Resistance ²
RDS(ON)
Total Gate Charge ²
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
-30
_
-1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
-0.02
_
_
_
_
_
_
5
1
3
8
5
20
7
412
91
62
5
Max.
_
_
-3.0
±100
-1
-25
75
120
8
_
_
_
_
_
_
660
_
_
_
Unit Test Condition
V
VGS=0V, ID=-250uA
V/ ^oC Reference to 25^oC, ID=-1mA
V
VDS=VGS, ID=-250uA
nA
VGS=±20V
uA
VDS=-30V,VGS=0
uA
VDS=-24V,VGS=0
VGS=-10V, ID=- 3A
m
VGS=-4.5V, ID=-2.6A
ID=-3A
nC
VDS=-24V
VGS=-4.5V
VDS=-15V
ID=-1A
nS
VGS=-10V
RG=3.3
RD=15
VGS=0V
pF
VDS=-25V
f=1.0MHz
S
VDS=-10V, ID=-3A
Source-Drain Diode
Parameter
Forward On Voltage ²
Reverse Recovery Time²
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
_
_
_
Typ.
_
20
15
Max.
-1.2
_
_
Unit
V
nS
nC
Test Condition
IS=-1.2A, VGS=0V.
Is=-3A, VGS=0
dl/dt=100A/uS
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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