SMG3403A Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SMG3403A
-3.2A, -30V,RDS(ON) 70m
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25^oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
BVDS/ Tj
Gate Threshold Voltage
VGS(th)
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current (Tj=25^oC)
IDSS
Drain-Source Leakage Current (Tj=55 ^oC)
Static Drain-Source On-Resistance ²
RDS(ON)
Total Gate Charge ²
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
-30
_
-0.5
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
-0. 1
_
_
_
_
_
_
_
10
1.8
3.6
7
15
21
15
735
100
80
9
Max.
_
_
-1.2
±100
-1
-25
70
85
120
18
_
_
_
_
_
_
1325
_
_
_
Unit
V
V/ ^oC
Test Condition
VGS=0V, ID=-250uA
Reference to 25^oC, ID=-1mA
V
VDS=VGS, ID=-250uA
nA
VGS=±12 V
uA
VDS=-30V,VGS=0
uA
VDS=-24V,VGS=0
VGS=-10V, ID=- 2.6A
m
VGS=-4.5V, ID=-2.0A
VGS=-2.5V, ID=-1.0A
ID=-3.2A
nC
VDS=-24V
VGS=-4.5V
VDS=-15V
ID=- 3.2A
nS
VGS=-10V
RG=3.3
RD=4.6
VGS=0V
pF
VDS=-25V
f=1.0MHz
S
VDS=-5V, ID=-3A
Source-Drain Diode
Parameter
Forward On Voltage ²
Reverse Recovery Time²
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
_
_
_
Typ.
_
24
19
Max.
-1.2
_
_
Unit
V
nS
nC
Test Condition
IS=-1.2A, VGS=0V.
Is=-3.2A, VGS=0
dl/dt=100A/uS
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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