SMG3018K Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SMG3018K
640mA, 30V,RDS(ON)8
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25^oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
BVDS/ Tj
Gate Threshold Voltage
VGS(th)
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current (Tj=25 ^oC)
IDSS
Drain-Source Leakage Current (Tj=70^oC)
Static Drain-Source On-Resistance
Total Gate Charge²
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
nput Capacitance
IOutput Capacitance
Reverse Transfer Capacitance
Forward Transconductance
RDS(ON)
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
30
_
0.5
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
0.06
_
_
_
_
_
_
1
0.5
0.5
12
10
56
29
32
8
6
600
Max.
_
_
2.0
±10
1
100
8
13
1.6
_
_
_
_
_
_
50
_
_
_
Unit
V
V/ ^oC
Test Condition
VGS=0V, ID=250uA
Reference to 25^oC, ID=1mA
V
VDS=VGS, ID=250uA
uA
VGS=± 20V
uA
VDS=30V,VGS=0
uA
VDS=24V,VGS=0
VGS=4V, ID=10mA
VGS=2.5V, ID=1mA
ID=600mA
nC
VDS=50V
VGS=4.5V
VDD=30V
ID=600mA
nS
VGS=10V
RG=3.3
RD=52
VGS=0V
pF
VDS=25V
f=1.0MHz
mS
VDS=10V, ID=600mA
Source-Drain Diode
Parameter
Forward On Voltage ²
Symbol
VDS
Min. Typ.
_
_
Max.
1.2
Unit Test Condition
V
IS=1.2 A, VGS=0V.
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch² copper pad of FR4 board; 270^OC/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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