SMG2361P Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement MOSFET

Elektronische Bauelemente
SMG2361P
-3.4A , -60V , R_DS(ON) 210 mΩ
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Condition
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current ¹
Drain-Source On-Resistance ¹
Forward Transconductance ¹
Diode Forward Voltage
VGS(th)
-1
-
-
IGSS
-
- ±100
-
-
-1
IDSS
-
-
-10
ID(ON)
-8
-
RDS(ON)
-
-
-
-
210
-
250
gFS
-
10
-
VSD
- -0.83 -
Dynamic ²
V VDS=VGS, ID= -250µA
nA VDS=0, VGS= ±20V
VDS= -48V, VGS=0
µA
VDS= -48V, VGS=0, TJ=55°C
A VDS= -5V, VGS= -10V
VGS= -10V, ID= -2.7A
mΩ
VGS= -4.5V, ID= -2.2A
S VDS= -15V,,ID= -2.7A
V IS= -0.8A, VGS=0
Total Gate Charge
Qg
-
5
-
Gate-Source Charge
Qgs
-
2.2
-
Gate-Drain Charge
Qgd
-
2.3
-
Turn-On Delay Time
Td(ON)
-
7
-
Rise Time
Tr
-
5
-
Turn-Off Delay Time
Td(OFF)
-
23
-
Fall Time
Tf
-
6
-
Input Capacitance
Ciss
-
371
-
Output Capacitance
Coss
-
31
-
Reverse Transfer Capacitance
Crss
-
26
-
Notes:
1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
ID= -2.7A
nC VDS= -30V
VGS= -4.5V
ID= -2.7A,
VDS= -30V,
nS VGEN= -10V,
RGEN=6Ω
RL=11.2Ω
VDS= -15V
pF VGS=0
f=1MHz
http://www.SeCoSGmbH.com/
22-Aug-2013 Rev. A
Any changes of specification will not be informed individually.
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