SMG2345PE Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement MOSFET

Elektronische Bauelemente
SMG2345PE
-3.2A , -40V , R_DS(ON) 164 mΩ
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Condition
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current ¹
Drain-Source On-Resistance ¹
Forward Transconductance ¹
Diode Forward Voltage
VGS(th)
-1
-
IGSS
-
-
-
-
IDSS
-
-
ID(ON)
-2
-
-
-
RDS(ON)
-
-
gFS
-
2
VSD
-
-0.7
Dynamic ²
-
±100
-1
-10
-
164
260
-
-
V VDS=VGS, ID= -250µA
nA VDS=0, VGS= ±20V
VDS= -32V, VGS=0
µA
VDS= -32V, VGS=0, TJ=55°C
A VDS= -5V, VGS= -4.5V
VGS= -10V, ID= -3.2A
mΩ
VGS= -4.5V, ID= -2.6A
S VDS= -5V,,ID= -3.6A
V IS= -0.4A, VGS=0
Total Gate Charge
Qg
-
15
-
Gate-Source Charge
Qgs
-
2
-
Gate-Drain Charge
Qgd
-
2
-
Turn-On Delay Time
Td(ON)
-
10
-
Rise Time
Tr
-
2.8
-
Turn-Off Delay Time
Td(OFF)
- 53.6 -
Fall Time
Tf
-
46
-
Notes:
1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
ID= -3.6A
nC VDS= -10V
VGS= -5V
ID= -1A,
nS ^{VDS= -15V,}
VGEN= -10V,
RG=50Ω
http://www.SeCoSGmbH.com/
26-Aug-2013 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2