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| SMG2343PE_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement MOSFET | |||
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Elektronische Bauelemente
SMG2343PE
-3.6 A, -30 V, RDS(ON) 57 mï
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
PARAMETER
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current A
Drain-Source On-Resistance A
Forward Transconductance A
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBO MIN TYP MAX UNIT TEST CONDITIONS
Static
VGS(th)
-0.8
-
-
IGSS
-
- ±100
-
-
-1
IDSS
-
- -10
ID(ON)
-2
-
-
-
RDS(ON)
-
-
57
-
89
gFS
-
2
-
VSD
- -0.7 -
Dynamic b
Qg
Qgs
Qgd
Td(on)
-
64
-
- 1.9 -
- 2.5 -
-
10
-
Tr
- 2.8 -
Td(off)
- 53.6 -
Tf
-
46
-
V VDS = VGS, ID = -250μA
nA VDS = 0V, VGS= ±8V
VDS = -24V, VGS= 0V
μA
VDS = -24V, VGS= 0V, TJ=55°C
A VDS = -5V, VGS= -4.5V
VGS= -10V, ID = -3.6A
mâ¦
VGS= -4.5V, ID = -2.8A
S VDS= -5V,,ID = -3.6A
V IS= -0.4A, VGS= 0V
ID= -3.6A
nC VDS= -10V
VGS= -5V
ID= -1A, VDS= -15V
nS VGEN= -10V
RG= 50â¦
Notes
a. Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
12-Nov-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
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