SMG2343 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – -4.1A , -30V , RDS(ON) 45 m
P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SMG2343
-4.1A , -30V , R_DS(ON) 45 mΩ
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. _Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V VGS=0, ID= -250uA
Gate-Threshold Voltage
VGS(th)
-1.0
-
-2.0
V VDS=VGS, ID= -250uA
Gate-Body Leakage Current
IGSS
-
-
±100
nA VGS=±20V
Drain-Source Leakage Current
-
-
-1
VDS= -24V, VGS=0
IDSS
µA
-
-
-5
VDS= -24V, VGS=0
Drain-Source On-Resistance ²
-
RDS(ON)
-
-
45
VGS= -10V, ID= -4.1A
mΩ
-
65
VGS= -4.5V, ID= -3.0A
Forward Transconductance
gfs
-
60
-
S VDS= -10V, ID= -4A
Dynamic
Total Gate Charge²
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
15.2
-
-
5.5
-
-
1
-
-
8.6
-
-
12.2
-
-
36.6
-
-
20.8
-
VDS= -24V,
nC VGS= -10V,
ID= -3A
VDS= -15V,
VGS= -10V,
nS RG=6Ω,
RD=15Ω,
ID= -1A
Input Capacitance
Ciss
-
590
-
Output Capacitance
Coss
-
75
-
pF VGS=0,VDS= -25V,f=1.0MHz
Reverse Transfer Capacitance
Crss
-
10
-
Diode Forward Voltage ²
VSD
-
-
-1
V IS= -1A, VGS=0, TJ=25°C
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300µs, duty cycle≦2%.
3. Surface mounted on 1 in² copper pad of FR4 board; 270°C / W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
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