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| SMG2342NE Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET | |||
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Elektronische Bauelemente
SMG2342NE
5.2 A, 40 V, RDS(ON) 86 mï
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Conditions
Static
Gate-Threshold Voltage
VGS(th)
1
-
Gate-Body Leakage
IGSS
-
-
Zero Gate Voltage Drain Current
-
-
IDSS
-
-
On-State Drain Current 1
ID(ON)
20
-
Drain-Source On-Resistance 1
-
-
RDS(ON)
-
-
Forward Transconductance 1
gFS
-
40
Diode Forward Voltage
VSD
- 0.7
Dynamic 2
Total Gate Charge
Qg
- 4.0
Gate-Source Charge
Qgs
- 1.1
Gate-Drain Charge
Qgd
- 1.4
Turn-On Delay Time
Td(ON)
-
16
Rise Time
Tr
-
5
Turn-Off Delay Time
Td(OFF)
-
23
Fall Time
Tf
-
3
Notes
1. Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
2. Guaranteed by design, not subject to production testing.
-
±100
1
25
-
86
128
-
-
-
-
-
-
-
-
-
V VDS = VGS, ID = 250μA
nA VDS = 0V, VGS= 20V
VDS = 32V, VGS= 0V
μA
VDS = 32V, VGS= 0V, TJ=55°C
A VDS = 5V, VGS= 10V
VGS= 10V, ID = 5.2A
mâ¦
VGS= 4.5V, ID = 3.7A
S VDS= 15V,,ID = 5.2A
V IS= 2.3A, VGS= 0V
ID= 5.2A
nC VDS= 15V
VGS= 4.5V
ID= 1A, VDD= 25V
nS VGEN= 10V
RL= 25â¦
http://www.SeCoSGmbH.com/
30-Dec-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2
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