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| SMG2340NE Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET | |||
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Elektronische Bauelemente
SMG2340NE
5.2 A, 40 V, RDS(ON) 43 mï
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Conditions
Static
Gate-Threshold Voltage
VGS(th)
1
-
-
V VDS = VGS, ID = 250μA
Gate-Body Leakage
IGSS
-
-
±10 μA VDS = 0V, VGS= 20V
Zero Gate Voltage Drain Current
On-State Drain Current 1
-
-
1
VDS = 32V, VGS= 0V
IDSS
μA
-
-
25
VDS = 32V, VGS= 0V, TJ=55°C
ID(ON)
20
-
-
A VDS = 5V, VGS= 10V
Drain-Source On-Resistance 1
Forward Transconductance 1
-
RDS(ON)
-
-
43
VGS= 10V, ID = 5.2A
mâ¦
-
50
VGS= 4.5V, ID = 4.2A
gFS
-
40
-
S VDS= 15V,,ID = 5.2A
Diode Forward Voltage
VSD
- 0.7 -
Dynamic 2
V IS= 2.3A, VGS= 0V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
- 4.0 -
ID= 5.2A
Qgs
- 1.1 -
nC VDS= 15V
Qgd
- 1.4 -
VGS= 4.5V
Turn-On Delay Time
Td(ON)
-
16
-
Rise Time
Turn-Off Delay Time
Fall Time
Tr
-
5
-
ID= 1A, VDD= 25V
Td(OFF)
-
23
-
nS VGEN= 10V
RL= 25â¦
Tf
-
3
-
Notes
1. Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
30-Dec-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2
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