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| SMG2334NE_12 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement MOSFET | |||
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Elektronische Bauelemente
SMG2334NE
3.5A , 30V , RDS(ON) 58 mï
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
VGS(th)
IGSS
1
-
-
-
-
±10
-
-
1
IDSS
-
-
25
ID(ON)
7
-
-
RDS(ON)
-
-
58
-
-
82
gFS
-
10
-
VSD
-
0.69
-
Dynamic 2
V VDS = VGS, ID = 250μA
nA VDS =0, VGS= ±12V
μA VDS =16V, VGS=0
VDS =16V, VGS=0, TJ=55°C
A VDS =5V, VGS=4.5V
m⦠VGS=4.5V, ID =2.8A
VGS=2.5V, ID =2.4A
S VDS=10V,,ID =2.8A
V IS=1A, VGS=0
Input Capacitance
Ciss
413
Output Capacitance
Coss
76
Reverse Transfer Capacitance
Crss
67
Total Gate Charge
Qg
-
6
-
Gate-Source Charge
Qgs
-
0.9
-
Gate-Drain Charge
Qgd
-
1.9
-
Turn-On Delay Time
Td(ON)
-
8
-
Rise Time
Tr
-
21
-
Turn-Off Delay Time
Td(OFF)
-
49
-
Fall Time
Tf
-
26
-
Notes
1. Pulse testï¼PWâ¦300 us duty cycleâ¦2%.
2. Guaranteed by design, not subject to production testing.
VDS=15 V,
pF VGS=0,
f=1 MHz
ID=2.8A
nC VDS=10V
VGS=4.5V
ID=2.8A,
VDS=10V
nS VGEN=4.5V
RL=3.6â¦,
RGEN=6â¦
http://www.SeCoSGmbH.com/
10-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
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