SMG2330N Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – 5.2A, 30V, RDS(ON) 32m
N-Channel Enhancement MOSFET

Elektronische Bauelemente
SMG2330N
5.2A, 30V, R_DS(ON) 32mΩ
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
On-State Drain Current¹
Static
ID(on)
20
-
-
A VDS=5V, VGS=10V
Zero Gate Voltage Drain Current
-
-
1
VDS=24V , VGS=0
IDSS
µA
-
-
25
VDS= 24V, VGS=0, TJ=55°C
Gate-Body Leakage Current
IGSS
-
-
±100 nA VGS=20V, VDS=0
Gate Threshold Voltage
VGS(th)
1
-
-
V VDS=VGS, ID=250µA
Drain-Source On Resistance¹
Forward Transconductance¹
-
RDS(ON)
-
-
32
VGS=10V, ID=5.2A
mΩ
-
64
VGS=4.5V, ID=3.7A
gFS
-
40
-
S VDS=15V,,ID=5.2A
Diode Forward Voltage
VSD
-
0.7
-
Dynamic ²
V IS=2.3 A, VGS=0
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
4.0
-
VDS=15V,
Qgs
-
1.1
-
nC VGS=4.5V,
Qgd
-
1.4
-
ID=5.2A
Turn-On Delay Time
Turn-Off Delay Time
Rise Time
Fall-Time
Td(ON)
Td(OFF)
Tr
Tf
-
16
-
-
23
-
-
5
-
-
3
-
VDD=25V,
nS ^{RL=25Ω ,}
ID=1A,
VGEN=10V
Notes:
1. Pulse test: PW <= 300us duty cycle <= 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
4-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
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