SMG2329S_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SMG2329S
-1.2A , -100V , R_DS(ON) 650 mΩ
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. _Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
-100
-
-
V VGS=0, ID= -250uA
Gate-Threshold Voltage
Gate-Body Leakage Current
VGS(th)
-1
IGSS
-
-
-2.5
V VDS=VGS, ID= -250uA
-
±100
nA VGS=±20V
Drain-Source Leakage Current
-
-
-10
VDS= -80V, VGS=0, TJ=25°C
IDSS
µA
-
-
-100
VDS= -80V, VGS=0, TJ=55°C
Drain-Source On-Resistance ²
-
RDS(ON)
-
-
650
VGS= -10V, ID= -1A
mΩ
-
700
VGS= -4.5V, ID= -0.5A
Forward Transconductance
gfs
-
3
-
S VDS= -5V, ID= -1A
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg
-
9.3
-
VDS= -50V,
Qgs
-
1.75
-
nC VGS= -10V,
Qgd
-
1.25
-
ID= -1A
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
-
2
-
-
18.4
-
-
19.6
-
-
19.6
-
VDS= -50V,
nS ^{VGS= -10V,}
RG=3.3Ω,
ID= -0.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
513
-
VGS=0,
Coss
-
29
-
pF VDS= -15V,
Crss
-
17
-
f=1.0MHz
Diode Forward Voltage ²
Continuous Source Current ^1,4
Pulsed Source Current ^2,4
Source-Drain Diode
VSD
-
-
-1.2
IS
-
-
-1.2
ISM
-
-
-5
V IS= -1A, VGS=0
A
VG=VD=0V , Force Current
A
Reverse Recovery Time
Reverse Recovery Charge
TRR
-
27
-
ns
IS= -1A, dI/dt=100A/µs, TJ=25°C
QRR
-
36
-
nC
Notes:
1. surface mounted on a 1 inch2 FR-4 board with 2OZ copper. , 270℃/W when mounted on Min. copper pad.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
15-Jul-2013 Rev. A
Any changes of specification will not be informed individually.
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