SMG2328S_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SMG2328S
1.2A , 100V , R_DS(ON) 310 mΩ
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
BVDSS
100
-
-
V VGS=0, ID=250µA
VGS(th)
1
-
2.5
V VDS=VGS, ID=250µA
Forward Transconductance
gfs
-
2.4
-
S VDS =5V, ID =1A
Gate-Body Leakage Current
IGSS
-
-
±100
nA VGS=±20V
Drain-Source Leakage
TJ=25°C
-
-
1
VDS=80V, VGS=0
Current
IDSS
µA
TJ=55°C
-
-
5
V DS=80V, VGS=0
Drain-Source On-Resistance ¹
-
RDS(ON)
-
-
310
VGS=10V, ID=1A
mΩ
-
320
VGS=4.5V, ID=0.5A
Total Gate Charge
Gate-Source Charge
Gate-Drain (‘’Miller’’)Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
9.7
-
-
1.6
-
-
1.7
-
-
1.6
-
-
19
-
-
13.6
-
-
19
-
VDS=80V,
nC VGS=10V,
ID=1A
VDD=50V,
VGS=10V,
nS RG=3.3Ω,
RL=30Ω,
ID=1A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
508
-
Coss
-
29
-
Crss
-
16.4
-
Source-Drain Diode
VGS=0,
pF VDS=15V,
f=1.0MHz
Diode Forward Voltage¹
Continuous Source Current^1.4
Pulsed Source Current^2.4
VSD
-
-
1.2
V IS=1A, VGS=0
IS
-
-
1.2
A VG=VD=0, Force Current
ISM
-
-
5
Reverse Recovery Time
Reverse Recovery Charge
TRR
-
14
-
nS _{IF=1A, dI/dt=100A/µs}
QRR
-
9.3
-
nC ^TJ=25°C
Notes:
1. Surface mounted on a 1 inch2 FR-4 board with 2OZ copper. ;270°C / W when mounted on min. copper pa d.
2. The data tested by pulsed , pulse width≦300µs, duty cycle≦2%
3. The power dissipation is limited by 150 °C junc tion temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation
http://www.SeCoSGmbH.com/
28-Sep-2012 Rev. A
Any changes of specification will not be informed individually.
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