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| SMG2328NE_15 Datasheet, PDF (2/2 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET | |||
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Elektronische Bauelemente
SMG2328NE
6.3 A, 20 V, RDS(ON) 22 mï
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Conditions
Gate-Threshold Voltage
Static
VGS(th)
0.4
-
-
V VDS = VGS, ID = 250μA
Gate-Body Leakage
IGSS
-
- ±100 nA VDS = 0V, VGS= ±8V
Zero Gate Voltage Drain Current
On-State Drain Current 1
-
-
1
VDS = 16V, VGS= 0V
IDSS
μA
-
-
10
VDS = 16V, VGS= 0V, TJ=55°C
ID(ON)
10
-
-
A VDS = 5V, VGS= 4.5V
Drain-Source On-Resistance 1
Forward Transconductance 1
RDS(ON)
gFS
-
-
22
VGS= 4.5V, ID = 6.5A
mâ¦
-
-
26
VGS= 2.5V, ID = 5.8A
- 11.3 -
S VDS= 10V,,ID = 6.5A
Diode Forward Voltage
VSD
- 0.75 -
Dynamic 2
V IS= 1.6A, VGS= 0V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
- 13.4 -
ID= 6.5A
Qgs
- 0.9 -
nC VDS= 10V
Qgd
- 2.0 -
VGS= 4.5V
Turn-On Delay Time
Td(ON)
-
8
-
Rise Time
Turn-Off Delay Time
Fall Time
Tr
-
24
-
ID= 1A, VDD= 10V
Td(OFF)
-
35
-
nS VGEN= 4.5V
RL= 15â¦
Tf
-
10
-
Notes:
1. Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
05-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2
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