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| SMG2322N_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET | |||
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Elektronische Bauelemente
SMG2322N
2.5A, 30V, RDS(ON) 85 mï
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
VGS(th)
IGSS
Static
1
1.5
3
-
4
100
-
-
1
IDSS
-
-
10
ID(ON)
6
-
-
RDS(ON)
-
62
85
-
102 125
gFS
-
3.5
-
VSD
-
0.65
-
Dynamic 2
V VDS=VGS, ID=250μA
nA VDS=0, VGS=8V
μA VDS=16V, VGS=0
VDS=20V, VGS=0, TJ=55°C
A VDS=5V, VGS=4.5V
m⦠VGS=10V, ID=2.5A
VGS=4.5V, ID=1.7A
S VDS=5V,,ID=3A
V IS=0.46A, VGS=0
Total Gate Charge
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain Charge
Qgd
-
Input Capacitance
Ciss
-
Output Capacitance
Coss
-
Reverse Transfer Capacitance
Crss
-
Turn-On Delay Time
Td(ON)
-
Rise Time
Tr
-
Turn-Off Delay Time
Td(OFF)
-
Fall Time
Tf
-
Notes:
1. Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
2. Guaranteed by design, not subject to production testing.
3.5
7
0.8
2
1.0
2
720 1500
165 400
60 200
10
20
13
30
14
30
4
20
ID=2.5A
nC VDS=10V
VGS=4.5V
VDS=15V
pF VGS=0
f=1MHz
ID=1A, VDD=10V
nS VGEN=4.5V
RG=6â¦
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
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