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| SMG2321P Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement MOSFET | |||
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Elektronische Bauelemente
SMG2321P
-4.1A , -20V , RDS(ON) 79 mï
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Static
Gate-Threshold Voltage
VGS(th)
-0.4
-
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
IGSS
-
-
-
-
IDSS
-
-
ID(ON)
-5
-
-
-
RDS(ON)
-
-
gFS
-
9
VSD
- -0.65
Dynamic 2
Total Gate Charge
Gate-Source Charge
Qg
-
7.2
Qgs
-
1.7
Gate-Drain Charge
Input Capacitance
Output Capacitance
Qgd
CISS
COSS
-
1.5
-
520
-
130
Reverse Transfer Capacitance
Turn-On Delay Time
CRSS
Td(ON)
-
70
-
8
Rise Time
Tr
-
18
Turn-Off Delay Time
Td(OFF)
-
52
Fall Time
Tf
-
39
Notes:
1 Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
2 Guaranteed by design, not subject to production testing.
-
±100
-1
-10
-
0.079
0.110
-
-
-
-
-
-
-
-
-
-
-
-
V VDS=VGS, ID = -250μA
nA VDS=0, VGS= ±8V
μA VDS= -16V, VGS=0
VDS= -16V, VGS=0, TJ=55°C
A VDS= -5V, VGS= -4.5V
⦠VGS= -4.5V, ID= -4.1A
VGS= -2.5V, ID= -3.2A
S VDS= -5V,,ID= -1.25A
V IS= -0.46A, VGS=0
ID= -4.1A
nC VDS= -10V
VGS= -4.5V
VDS=15V,
pF VGS=0V,
f=1MHz
VDD= -10V
nS
VGEN= -4.5V
RG=6â¦
IL= -1A
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
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