 English |
|
|
|
|
|
|
|
| SMG2319P_15 Datasheet, PDF (2/5 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement MOSFET | |||
| |||
| ◁ |
Elektronische Bauelemente
SMG2319P
-2.1A , -30V , RDS(ON) 200 mï
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Zero Gate Voltage Drain Current
Static
-
-
-1
VDS = -24V, VGS=0
IDSS
μA
-
-
-10
VDS = -24V, VGS=0, TJ=55°C
Gate-Body Leakage
IGSS
-
-
±100 nA VDS =0, VGS= ±20V
Gate-Threshold Voltage
On-State Drain Current 1
VGS(th)
-1.3
-
-
V VDS =VGS, ID = -250μA
ID(ON)
-3
-
-
A VDS = -5V, VGS= -4.5V
Drain-Source On-Resistance 1
Forward Transconductance 1
-
RDS(ON)
-
-
200
VGS= -10V, ID = -2.1A
mâ¦
-
300
VGS= -4.5V, ID = -1.7A
gFS
-
2
-
S VDS= -5V,,ID = -2.1A
Diode Forward Voltage
VSD
-
-0.7 -1.2
Dynamic 2
V IS= -0.4A, VGS=0
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
3.4
-
ID= -2.1A
Qgs
-
0.8
-
nC VDS= -10V
Qgd
-
1.5
-
VGS= -5V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Td(ON)
Tr
Td(OFF)
Tf
-
8
-
-
18
-
-
52
-
-
39
-
VDS= -10V
nS
VGEN= -10V
RG=50â¦
ID= -1.1A
Notes:
1. Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 5
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese