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| SMG2314N_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode MOSFET | |||
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Elektronische Bauelemente
SMG2314N
5.3A , 20V , RDS(ON) 32 mï
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ.
Gate-Threshold Voltage
VGS(th)
0.7
-
Gate-Body Leakage
IGSS
-
-
Zero Gate Voltage Drain Current
-
-
IDSS
-
-
On-State Drain Current 1
ID(on)
10
-
Drain-Source On-Resistance 1
-
-
RDS(ON)
-
-
Forward Transconductance 1
gfs
-
11.3
Diode Forward Voltage
VSD
-
0.75
Dynamic 2
Total Gate Charge
Qg
-
13.4
Gate-Source Charge
Qgs
-
0.9
Gate-Drain Charge
Qgd
-
2
Turn-on Delay Time
Td(on)
-
8
Rise Time
Tr
-
24
Turn-off Delay Time
Td(off)
-
35
Fall Time
Tf
-
10
Notes:
1 Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
2 Guaranteed by design, not subject to production testing.
Max.
2
±100
1
10
-
32
44
-
-
-
-
-
-
-
-
-
Unit
V
nA
uA
A
mâ¦
S
V
Test Conditions
VDS=VGS, ID=250uA
VDS=0, VGS= ±8V
VDS=16V, VGS=0
VDS=16V, VGS=0, TJ=55°C
VDS =5V, VGS=4.5V
VGS=4.5V, ID=4.6A
VGS=2.5V, ID=3.9A
VDS=10V, ID=4A
IS=1.6A, VGS=0
nC
VDS=10V, VGS= 4.5V,
ID=4A
nS
VDD=10V, VGEN=4.5V,
RL=15â¦, ID=1A
http://www.SeCoSGmbH.com/
8-Aug-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
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