SMG2307PE_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Elektronische Bauelemente Enhancement MOSFET

Elektronische Bauelemente
SMG2307PE
-5.2 A, -20 V, R_DS(ON) 31 mΩ
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current ¹
Drain-Source On-Resistance ¹
Forward Transconductance ¹
Diode Forward Voltage
VGS(th)
IGSS
-0.3 -0.55 -
-
-
±10
-
-
-1
IDSS
-
-
-10
ID(ON)
-10
-
-
-
-
31
-
RDS(ON)
-
-
44
-
56
-
-
83
gFS
-
20
-
VSD
-
-0.7
-
Dynamic ²
V VDS = VGS, ID = -250µA
µA VDS = 0V, VGS= ±10V
VDS = -16V, VGS= 0V
µA
VDS = -16V, VGS= 0V, TJ=55°C
A VDS = -5V, VGS= -4.5V
VGS= -4.5V, ID = -4.2A
VGS= -2.5V, ID = -3.5A
mΩ
VGS= -1.8V, ID = -3.1A
VGS= -1.5V, ID = -2.6A
S VDS= -10V,,ID = -4.2A
V IS= -0.95A, VGS=0
Input Capacitance
Ciss
-
826
-
Output Capacitance
Coss
-
96
-
Reverse Transfer Capacitance
Crss
-
46
-
Total Gate Charge
Qg
-
18
-
Gate-Source Charge
Qgs
-
4.8
-
Gate-Drain Charge
Qgd
-
3.1
-
Turn-On Delay Time
Td(ON)
-
81
-
Rise Time
Tr
-
163
-
Turn-Off Delay Time
Td(OFF)
-
785
-
Fall Time
Tf
-
397
-
Notes:
1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
VDS= -15V
pF VGS=0
f=1MHz
ID= -4.2A
nC VDS= -10V
VGS= -4.5V
ID= -4.2A,
RL=2.4Ω
nS VDS= -10V
VGEN= -4.5V
RGEN= 6Ω
http://www.SeCoSGmbH.com/
22-Oct-2012 Rev. A
Any changes of specification will not be informed individually.
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