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| SMG2306N_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Mos.FET | |||
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Elektronische Bauelemente
SMG2306N
3.5A , 30V , RDS(ON) 58 mï
N-Channel Enhancement Mode Mos.FET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Static
Gate-Threshold Voltage
VGS(th)
1.0
-
Gate-Body Leakage
IGSS
-
-
Zero Gate Voltage Drain Current
-
-
IDSS
-
-
On-State Drain Current 1
ID(on)
6
-
Drain-Source On-Resistance 1
-
-
RDS(ON)
-
-
Forward Transconductance 1
gfs
-
6.9
Diode Forward Voltage
VSD
-
0.8
Dynamic 2
Total Gate Charge
Qg
-
2.2
Gate-Source Charge
Qgs
-
0.5
Gate-Drain Charge
Qgd
-
0.8
Turn-on Delay Time
Td(on)
-
16
Rise Time
Tr
-
5
Turn-off Delay Time
Td(off)
-
23
Fall Time
Tf
-
3
Notes:
1 Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
2 Guaranteed by design, not subject to production testing.
-
±100
1
25
-
58
82
-
-
-
-
-
-
-
-
-
V VDS=VGS, ID=250uA
nA VDS=0, VGS=20V
uA VDS=24V, VGS=0
VDS=24V, VGS=0, TJ= 55°C
A VDS =5V, VGS=10V
m⦠VGS=10V, ID=3.5A
VGS=4.5V, ID=3A
S VDS=15V, ID=3.5A
V IS=2.3A, VGS=0
nC
VDS=15V, VGS=4.5V,
ID=3.5A
nS
VDD=25V, VGEN=10V,
RL=25ï, ID=1A
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
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