 English |
|
|
|
|
|
|
|
| SMG2305P_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement MOSFET | |||
| |||
| ◁ |
Elektronische Bauelemente
SMG2305P
-4.5A , -20V , RDS(ON) 43 mï
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Condition
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
VGS(th)
-0.4
-
IGSS
-
-
-
-
IDSS
-
-
ID(ON)
-10
-
-
-
RDS(ON)
-
-
-
-
gFS
-
12
VSD
- -0.74
Dynamic 2
-
±100
-1
-25
-
43
54
120
-
-
V VDS=VGS, ID= -250μA
nA VDS=0, VGS= ±8V
VDS= -16V, VGS=0
μA
VDS= -16V, VGS=0, TJ=55°C
A VDS= -5V, VGS= -4.5V
VGS= -4.5V, ID= -3.6A
m⦠VGS= -2.5V, ID= -2.9A
VGS= -1.8V, ID= -2.1A
S VDS= -10V,,ID= -3.6A
V IS= -1A, VGS=0
Total Gate Charge
Qg
-
10
-
Gate-Source Charge
Qgs
-
1.6
-
Gate-Drain Charge
Qgd
-
3.1
-
Turn-On Delay Time
Td(ON)
-
10
-
Rise Time
Tr
-
14
-
Turn-Off Delay Time
Td(OFF)
-
38
-
Fall Time
Tf
-
28
-
Input Capacitance
Ciss
-
666
-
Output Capacitance
Coss
-
88
-
Reverse Transfer Capacitance
Crss
-
80
-
Notes:
1. Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
2. Guaranteed by design, not subject to production testing.
ID= -3.6A
nC VDS= -10V
VGS= -4.5V
ID= -3.6A,
VDS= -10V,
nS VGEN= -4.5V,
RGEN=6â¦
RL=2.8â¦
VDS= -15V
pF VGS=0
f=1MHz
http://www.SeCoSGmbH.com/
26-Jul-2013 Rev. C
Any changes of specification will not be informed individually.
Page 2 of 4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese