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| SMG2305PE_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement MOSFET | |||
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Elektronische Bauelemente
SMG2305PE
-4.5 A, -20 V, RDS(ON) 43 mï
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
VGS(th)
-0.7
-
IGSS
-
-
-
-
IDSS
-
-
ID(ON)
-10
-
-
-
RDS(ON)
-
-
-
-
gFS
-
12
VSD
- -0.60
Dynamic 2
-
±100
-1
-10
-
43
54
120
-
-
V VDS = VGS, ID = -250μA
nA VDS = 0V, VGS= ±8V
VDS = -16V, VGS= 0V
μA
VDS = -16V, VGS= 0V, TJ=55°C
A VDS = -5V, VGS= -4.5V
VGS= -4.5V, ID = -3.6A
m⦠VGS= -2.5V, ID = -3.1A
VGS= -1.8V, ID = -2.7A
S VDS= -5V,,ID = -1.25A
V IS= -0.46A, VGS= 0V
Total Gate Charge
Qg
-
12.0
-
Gate-Source Charge
Qgs
-
2.0
-
Gate-Drain Charge
Qgd
-
2.0
-
Turn-On Delay Time
Td(ON)
-
6.5
-
Rise Time
Tr
-
20
-
Turn-Off Delay Time
Td(OFF)
-
31
-
Fall Time
Tf
-
21
-
Notes:
1. Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
2. Guaranteed by design, not subject to production testing.
ID= -2.4A
nC VDS= -5V
VGS= -4.5V
IL= -1A, VDD= -10V
nS VGEN= -4.5V
RG= 6â¦
http://www.SeCoSGmbH.com/
14-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
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