SMG2305 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SMG2305
-4.2A, -20V,RDS(ON) 65m
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25^oC Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Min.
-20
Typ.
_
Max.
_
Unit
V
Test Condition
VGS=0V, ID=-250uA
Breakdown Voltage Temp. Coefficient
BVDS/ Tj
_
-0.1
_
V/
Reference to 25^oC,ID=-1mA
Gate Threshold Voltage
VGS(th)
-0.5
_
_
V
VDS=VGS, ID=-250uA
Gate-Source Leakage Current
IGSS
_
_
±100
nA
VGS=±12V
Drain-Source Leakage Current (Tj=25^oC)
IDSS
Drain-Source Leakage Current (Tj=70^oC)
_
_
-1
uA
VDS=-20V,VGS=0
_
_
-10
uA
VDS=-16V,VGS=0
_
_
53
VGS=-10V, ID=-4.5A
Static Drain-Source On-Resistance ²
_
RDS(ON)
_
_
65
VGS=-4.5V, ID=-4.2A
m
_
100
VGS=-2.5V, ID=-2A
_
_
250
VGS=-1.8V, ID=-1A
Total Gate Charge ²
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
_
10.6
_
_
2.32
_
_
3.68
_
_
5.9
_
_
3.6
_
_
32.4
_
_
2.6
_
_
740
_
_
167
_
_
126
_
_
9
_
ID=-4.2A
nC
VDS=-16V
VGS=-4.5V
VDS=-15V
ID=-4.2A
nS
VGS=-10V
RG=6
RD=3.6
VGS=0V
pF
VDS=-15V
f=1.0MHz
S
VDS=-5V, ID=-2.8A
Source-Drain Diode
Parameter
Forward On Voltage²
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
_
_
_
Typ.
_
27.7
22
Max.
-1.2
_
_
Unit
V
nS
nC
Test Condition
IS=-1.2A, VGS=0V.
Is=-4.2A,VGS=0V
dl/dt=100A/uS
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch² copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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