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| SMG2301P Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement MOSFET | |||
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Elektronische Bauelemente
SMG2301P
-2.6 A, -20 V, RDS(ON) 130 mï
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
VGS(th)
-0.4
-
-1
IGSS
-
- ±100
-
-
-1
IDSS
-
-
-10
ID(ON)
-3
-
RDS(ON)
-
-
-
- 0.130
- 0.190
gFS
-
3
-
VSD
- -0.70 -
Dynamic 2
V VDS = VGS, ID = -250μA
nA VDS = 0V, VGS= ±8V
VDS = -16V, VGS= 0V
μA
VDS = -16V, VGS= 0V, TJ=55°C
A VDS = -5V, VGS= -4.5V
VGS= -4.5V, ID = -2.6A
â¦
VGS= -2.5V, ID = -2.1A
S VDS= -5V,,ID = -2.8A
V IS= -1.6A, VGS= 0V
Total Gate Charge
Qg
-
12.2
-
Gate-Source Charge
Qgs
-
1.1
-
Gate-Drain Charge
Qgd
-
1.5
-
Turn-On Delay Time
Td(ON)
-
6.5
-
Rise Time
Tr
-
20
-
Turn-Off Delay Time
Td(OFF)
-
31
-
Fall Time
Tf
-
21
-
Notes:
1. Pulse testï¼PW ⦠300 us duty cycle ⦠2%.
2. Guaranteed by design, not subject to production testing.
ID= -2.6A
nC VDS= -5V
VGS= -4.5V
VDD= -5V
nS
VGEN= -4.5V
RG= 6â¦
RL= 5â¦
http://www.SeCoSGmbH.com/
14-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
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