SMG2301 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SMG2301
-2.6A, -20V,RDS(ON) 130m
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25^oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
BVDS/ Tj
VGS(th)
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current (Tj=25 ^oC)
IDSS
Drain-Source Leakage Current (Tj=70^oC)
Static Drain-Source On-Resistance ²
RDS(ON)
Total Gate Charge²
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time ²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
-20
_
-0.5
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
-0.1
_
_
_
_
_
_
5.2
1.36
0.6
5.2
9.7
19
29
295
170
65
4.4
Max.
_
_
_
±100
-1
-10
130
190
10
_
_
_
_
_
_
_
_
_
_
Unit Test Condition
V
V/ ^oC
VGS=0V, ID=-250uA
Reference to 25^oC,ID=-1mA
V
VDS=VGS, ID=-250uA
nA
VGS=±12V
uA
VDS=-20V,VGS=0
uA
VDS=-16V,VGS=0
VGS=-5.0V, ID=-2.8A
m
VGS=-2.8V, ID=-2A
ID=-2.8A
nC
VDS=-6.0V
VGS=-5.0V
VDS=-15V
ID=-1A
nS
VGS=-10V
RG=6
RD=15
VGS=0V
pF
VDS=-6V
f=1.0MHz
S
VDS=-5V, ID=-2.8A
Source-Drain Diode
Parameter
Forward On Voltage²
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Symbol
VSD
Is
ISM
Min.
_
_
_
Typ.
_
_
_
Max.
-1.2
-1
-10
Unit
V
A
A
Test Condition
IS=-1.6A, VGS=0V.
VD=VG=0V, VS=-1.2V
G
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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