SID9575_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Elektronische Bauelemente Mode Power MOSFET

Elektronische Bauelemente
SID9575
-15A , -60V , R_DS(ON) 90 mΩ
P-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-60
-
-
V VGS=0, ID = -250µA
Breakdown Voltage Temperature
Coefficient
∆BVDSS / ∆TJ
-
-0.06
-
V / °C Reference to 25°C, I D = -1mA
Gate Threshold Voltage
VGS(th)
-1
-
-3
V VDS=VGS, ID= -250 µA
Forward Trans-conductance
gfs
-
14
-
S VDS = -10V, ID = -9A
Gate-Source Leakage Current
Drain-Source
Current
Leakage ^TJ=25℃
TJ=150℃
Static Drain-Source On-Resistance²
Total Gate Charge²
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
IGSS
IDSS
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
-
±100 nA VGS= ±25V
-
-
-1
VDS= -60 V, VGS=0
uA
-
-
-25
VDS= -48 V, VGS=0
-
-
90
VGS= -10 V, ID= -12A
mΩ
-
-
120
VGS= -4.5 V, ID= -9 A
-
17
27
ID= -9 A
-
5
-
nC VDS= -48 V
-
6
-
VGS= -4.5 V
-
10
-
VDS= -30 V
-
19
-
ID= -9 A
nS VGS= -10 V
-
46
-
RG=3.3 Ω
-
53
-
RD=3.3 Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
1660 2660
VGS=0
Coss
-
160
-
pF VDS= -25V
Crss
-
100
-
f =1 MHz
Forward On Voltage²
VSD
Reverse Recovery Time²
Trr
Reverse Recovery Charge
Qrr
Notes:
1. Pulse width limited by safe operating area.
2. Pulse width≦300us, duty cycle≦2%
.
Source-Drain Diode
-
-
-1.2
-
56
-
-
159
-
V IS= -9A, VGS=0
nS _{IS= -9 A, VGS=0}
nC ^{dl/dt=100A / µs}
http://www.SeCoSGmbH.com/
12-May-2011 Rev. B
Any changes of specification will not be informed individually.
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