SID9435_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SID9435
-20A, -30V,RDS(ON)50m
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25^oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
BVDS/ Tj
Gate Threshold Voltage
VGS(th)
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current (Tj=25^oC)
IDSS
Drain-Source Leakage Current(Tj=150^oC)
Static Drain-Source On-Resistance²
RD S(O N )
Total Gate Charge²
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
- 30
_
-1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
- 0.1
_
_
_
_
_
_
10
3
5
9.6
18
19
14
463
187
140
9.6
Max.
_
_
-3.0
±100
-1
-25
50
90
16
_
_
_
_
_
_
740
_
_
_
Unit Test Condition
V
VGS=0V, ID=-250uA
o
V/ C
Reference to 25^oC, ID=-1mA
V
VDS=VGS, ID=-250uA
nA
VGS=±20V
uA
VDS=-30V,VGS=0
uA
VDS=-24V,VGS=0
VGS=-10V, ID=-10A
m
VGS=-4.5V, ID=-5A
ID=-10A
nC
VDS=-24V
VGS=-4.5V
VDD=-15V
ID=-10A
nS
VGS=-10 V
RG=3.3
RD=1.5
VGS=0V
pF
VDS=25V
f=1.0MHz
S
VDS=-10V, ID=-6 A
Source-Drain Diode
Parameter
Forward On Voltage²
Reverse Recovery Time
Reverse Recovery Change
Symbol
VSD
Trr
Qrr
Min.
_
_
_
Typ.
_
34
30
Max.
-1.2
_
_
Unit Test Condition
V
IS=-10A, VGS=0V.
nS
IS=-10A, VGS=0V.
nC
dl/dt=100A/us
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
ttp://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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