SGM9452_15 Datasheet, PDF (2/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SGM9452
4A , 20V , R_DS(ON) 38 mΩ
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (T_J=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Drain-Source Breakdown Voltage
BVDSS
20 -
-
V
Gate Threshold Voltage
VGS(th)
0.7 -
1.5
V
Gate-Source Leakage Current
IGSS
-
- ±100 nA
Drain-Source Leakage Current
IDSS
-
-
1
µA
Static Drain-Source On-Resistance ¹
RDS(ON)
-
-
38
-
-
50 mΩ
Forward transconductance ¹
-
-
80
gFS
3
-
-
S
Dynamic characteristics ²
Turn-on Delay Time ^1.2
Rise Time ²
Turn-off Delay Time ²
Fall Time ²
Td(on)
Tr
Td(off)
Tf
-
8
-
-
9
-
nS
- 13
-
-
3
-
Input Capacitance
Ciss
- 570 -
Output Capacitance
Coss
- 80
-
pF
Reverse Transfer Capacitance
Crss
- 65
-
Drain-source body diode characteristics
Forward On Voltage¹
VSD
Notes:
1. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%.
2. These parameters have no way to verify
-
-
1.3
V
VGS=0, ID=250µA
VDS=VGS, ID=250µA
VGS= ±12V, VDS=0
VDS=20V, VGS=0
VGS=10V, ID=4A
VGS=4.5V, ID=4A
VGS=2.5V, ID=3A
VDS=5V, ID=3A
VDS=10V
ID=1A
VGS=5V
RGEN=3.3Ω
RD=10Ω
VGS=0
VDS=20V
f=1.0 MHz
IS=1A, VGS=0
http://www.SeCoSGmbH.com/
13-Dec-2013 Rev. A
Any changes of specification will not be informed individually.
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