SGM3055_11 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – 6A , 30V , RDS(ON) 26 mΩ N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente
SGM3055
6A , 30V , R_DS(ON) 26 m
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (T_J=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current ^TJ=25°C
T_J=70°C
Static Drain-Source On-Resistance
Total Gate Charge ²
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time ²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BV_DSS
△BV_DSS /△T_J
V_GS(th)
I_GSS
I_DSS
R_DS(ON)
Q_g
Q_gs
Q_gd
T_d(on)
T_r
T_d(off)
T_f
C_iss
C_oss
C_rss
30
-
-
V V_GS=0, I_D=250μA
- 0.037 - V / °C Reference to 25°C, I_D=1mA
1
-
3
V V_DS=V_GS, I_D=250μA
-
- ±100 nA V_GS= ±20V
-
-
25
μA ^{VDS=30V, VGS=0}
-
-
250
V_DS=24V, V_GS=0
-
-
26
mΩ ^{VGS=10V, ID=4A}
-
-
40
V_GS=4.5V, I_D=3A
- 5.4
-
- 1.3
-
- 3.6
-
I_D=4 A
nC V_DS=24V
V_GS=5V
- 3.6
-
- 19.8 -
-
13
-
- 3.2
-
V_DD=15V
I_D=1A
nS V_GS=10V
R_G=3.3Ω
R_D=1.9Ω
- 260
-
- 144
-
-
13
-
V_GS=0
pF V_DS=30 V
f=1.0 MHz
Forward On Voltage²
Continuous Source Current(Body Diode)
Pulsed Source Current(Body Diode) ¹
Notes:
1. Pulse width limited by safe operating area.
2. Pulse width≦300μs, duty cycle≦2%.
Source-Drain Diode
V_SD
-
- 1.3
I_S
-
-
4
I_SM
-
- 20
V I_S=2A, V_GS=0, T_J=25°C
A V_D=V_G=0, V_S=1.3V
A
http://www.SeCoSGmbH.com/
5-Aug-2011 Rev. B
Any changes of specification will not be informed individually.
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