SCG2019 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente
SCG2019
-0.62A , -20V , R_DS(ON) 810 mΩ
P-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Junction-to-Ambient Thermal Resistance ^{1 T≦10S}
Steady State
RθJA
285
355
Junction-to-Ambient Thermal Resistance ^{2 T≦10S}
Steady State
RθJA
395
465
Junction-to-Case Thermal Resistance
Steady State
RθJC
280
Note:
1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper.
2. Surface mounted on FR4 board using minimum pad size, 1oz copper
3. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%
4. Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Rating
Max.
325
440
460
560
320
Unit
°C / W
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Min. Typ. Max.
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Threshold Voltage
Drain-Source On Resistance
Forward Transconductance
V(BR)DSS
-20
-
-
IDSS
-
-
-1
IGSS
-
-
±5
VGS(TH)
-0.4
-0.65 -0.9
-
480
810
RDS(ON)
-
620 1050
-
780 1300
gFS
-
1.25
-
Body-Drain Diode Ratings
Diode Forward On–Voltage
VSD
-0.5
-0.65 -1.5
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
Td(ON)
Tr
Td(OFF)
Tf
-
74.5
-
-
10.8
-
-
10.2
-
-
1.8
-
-
0.12
-
-
0.18
-
-
0.74
-
-
45
-
-
140
-
-
1500
-
-
2100
-
Unit
Teat Conditions
V VGS=0, ID= -250µA
µA VDS= -16V, VGS=0
µA VDS=0 , VGS= ±5V
V VDS=VGS, ID= -250µA
VGS= -4.5V, ID= -0.45A
mΩ V_GS= -2.5V, I_D= -0.35A
VGS= -1.8V, ID= -0.25A
S VDS= -5V, ID= -0.45A
V IS= -150mA, VGS=0
VDS= -10V,
pF VGS=0,
f=100KHz
VDS= -10V,
nC VGS= -4.5V,
ID= -0.45A
VDD= -10V,
nS ^{I D= -0.45A,}
VGS= -4.5V,
RG=6Ω.
http://www.SeCoSGmbH.com/
12-Mar-2013 Rev. A
Any changes of specification will not be informed individually.
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