SBESD9N5_15 Datasheet, PDF (2/3 Pages) SeCoS Halbleitertechnologie GmbH – ESD Protection for high- speed interfaces

Elektronische Bauelemente
SBESD9N5
45W, 5V
Ultra Low Capactance
ESD Protection for high-speed interfaces
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Condition
Reveres maximum working voltage
VRWM
IR=1µA
Reveres leakage current
IR
VRWM=5V
Reveres breakdown voltage
VBR
IT=1mA
Forward voltage
VF
IF=10mA
Clamping Voltage
IPP=1A, tp=8/20us
VC
IPP=3A, tp=8/20us
Junction capacitance
CJ
I/O to GND
Min.
-
-
6.6
-
-
-
-
Typ.
5
-
8
0.85
-
-
0.5
Max.
-
1
8.9
1
11
15
0.8
Units
V
µA
V
V
V
V
pF
RATINGS AND CHARACTERISTICS CURVES
http://www.SeCoSGmbH.com/
04-May-2012 Rev. A
Any changes of specification will not be informed individually.
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