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| SBESD9N5C Datasheet, PDF (2/3 Pages) SeCoS Halbleitertechnologie GmbH – ESD Protection for high-speed interfaces | |||
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Elektronische Bauelemente
SBESD9N5C
48W, 5V
Ultra Low Capactance
ESD Protection for high-speed interfaces
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Condition
Reveres maximum working voltage
VRWM
Reveres leakage current
IR
VRWM=5V
Reveres breakdown voltage
VBR
IT=1mA
Clamping Voltage
IPP=1A, tp=8/20us
VC
IPP=3A, tp=8/20us
Junction capacitance
CJ
f=1MHz, VR=0
Min.
-
-
7
-
-
-
Typ.
-
-
8.5
-
-
0.45
Max.
5
1
10
11.5
16
0.7
Units
V
μA
V
V
V
pF
RATINGS AND CHARACTERISTICS CURVES
http://www.SeCoSGmbH.com/
21-Apr-2014 Rev. C
Any changes of specification will not be informed individually.
Page 2 of 3
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