SBESD5301N Datasheet, PDF (2/3 Pages) SeCoS Halbleitertechnologie GmbH – Ultra Low Capacitance ESD Protection for high-speed interfaces

Elektronische Bauelemente
SBESD5301N
82W, 5V
Ultra Low Capacitance
ESD Protection for high-speed interfaces
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max.
Reveres maximum working voltage
VRWM
-
-
5
Reveres leakage current
IR
VRWM=5V
-
0.1
100
Reveres breakdown voltage
VBR
IT=1mA
7
8
9
Forward voltage
Clamping voltage ¹
Dynamic resistance ¹
VF
VCL
RDYN
IT=10mA
IPP=16A, tp=100ns
0.6
0.9
1.2
-
18
-
-
0.57
-
Clamping Voltage ²
IPP=1A, tp=8/20us
-
-
10
VC
IPP=5.5A, tp=8/20us
-
-
15
Junction capacitance
CJ
f=1MHz, VR=0
-
0.4
0.55
Note:
1. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to16A.
2. According to IEC61000-4-5.
Units
V
nA
V
V
V
Ω
V
V
pF
RATINGS AND CHARACTERISTICS CURVES
http://www.SeCoSGmbH.com/
18-Dec-2013 Rev. A
Any changes of specification will not be informed individually.
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