SBESD0801S Datasheet, PDF (2/3 Pages) SeCoS Halbleitertechnologie GmbH – 56W, 5V Ultra Low Capacitance ESD Protection for high-speed interfaces

Elektronische Bauelemente
SBESD0801S
56W, 5V
Ultra Low Capacitance
ESD Protection for high-speed interfaces
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Rating
Symbol
IEC 61000-4-2 (ESD)
Air contact
Contact discharge
Peak pulse power (tp=8/20us)
PPK
Peak pulse current (tp=8/20us)
IPP
Storage temperature range
TJ, TSTG
Value
±17
±12
56
2
-55~125 , -55 ~ 150
Unit
kV
W
A
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Condition
Reveres maximum working voltage
VRWM
Reveres leakage current
IR
VRWM=5V
Reveres breakdown voltage
VBR
IT=1mA
Clamping Voltage
IPP=1A, tp=8/20us
VC
IPP=2A, tp=8/20us
Junction capacitance
CJ
f=1MHz, VR=0
Min.
-
-
6
-
-
-
Typ.
-
0.01
8.8
-
-
0.35
Max.
5
1
11
12
14
0.5
Units
V
µA
V
V
V
pF
RATINGS AND CHARACTERISTICS CURVES
http://www.SeCoSGmbH.com/
23-Dec-2015 Rev. A
Any changes of specification will not be informed individually.
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